Abstract
C-axis oriented lithium niobate (LiNbO3) films were deposited by pulsed-laser deposition on silicon using a transparent conducting interlayer of aluminum (Al)-doped zinc oxide (ZnO). Only two x-ray diffraction reflections corresponding to (006) and (0012) planes of LiNbO3 were observed in the films deposited at a 100-mTorr oxygen pressure and a 450–500 °C substrate temperature. Presence of sharp modes corresponding to E(TO) and A(LO), and absence of any superfluous peaks mainly around 900–905 cm−1 in the Raman spectra confirmed the formation of textured LiNbO3 film. Measured value of direct current and alternate current (AC) conductivities and dielectric constant are 8.6 × 10-12 Ω−1cm-1, 1.16 × 10-6 Ω−1cm-1, and 29.3, respectively, at room temperature. Behavior of dielectric constant and AC conductivity with frequency and temperature are close to the reported single-crystal data.
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Gupta, V., Bhattacharya, P., Yuzyuk, Y.I. et al. Growth and characterization of c-axis oriented LiNbO3 film on a transparent conducting Al:ZnO inter-layer on Si. Journal of Materials Research 19, 2235–2239 (2004). https://doi.org/10.1557/JMR.2004.0322
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DOI: https://doi.org/10.1557/JMR.2004.0322