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Orientation control of lead zirconate titanate film by combination of sol-gel and sputtering deposition

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Abstract

Highly oriented lead zirconate titanate (PZT) films were fabricated on a platinized silicon substrate using a combination of sol-gel and radio frequency (RF) magnetron sputtering deposition methods. A sol-gel derived PZT layer highly oriented to the (100) plane was deposited as a seed layer, and PZT with the same composition then was deposited on the seed layer by RF-magnetron sputtering. The film deposited on the seed layer showed a strong (100) preferred orientation, while the film deposited without the seed layer showed a (111) preferred orientation. Furthermore, a thick PZT film of up to 4 μm was able to be deposited without cracks by using the seed layer. The piezoelectric property of the (100) oriented film was much better than that of the (111) oriented film.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Korea

    Chee-Sung Park, Sang-Wook Kim, Gun-Tae Park, Jong-Jin Choi & Hyoun-Ee Kim

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  1. Chee-Sung Park
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  2. Sang-Wook Kim
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  3. Gun-Tae Park
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  4. Jong-Jin Choi
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  5. Hyoun-Ee Kim
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Park, CS., Kim, SW., Park, GT. et al. Orientation control of lead zirconate titanate film by combination of sol-gel and sputtering deposition. Journal of Materials Research 20, 243–246 (2005). https://doi.org/10.1557/JMR.2005.0030

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  • DOI: https://doi.org/10.1557/JMR.2005.0030

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