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Preparation of molybdenum-doped indium oxide thin films using reactive direct-current magnetron sputtering

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Abstract

High-mobility molybdenum-doped In2O3 films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm2 V−1 s−1, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10−4 ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In2O3 crystal structure.

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Authors and Affiliations

  1. Department of Materials Science, Fudan University, Shanghai, 200433, People’s Republic of China

    Xifeng Li, Weina Miao, Qun Zhang, Li Huang, Zhuangjian Zhang & Zhongyi Hua

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  1. Xifeng Li
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  2. Weina Miao
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  3. Qun Zhang
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  4. Li Huang
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  5. Zhuangjian Zhang
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Li, X., Miao, W., Zhang, Q. et al. Preparation of molybdenum-doped indium oxide thin films using reactive direct-current magnetron sputtering. Journal of Materials Research 20, 1404–1408 (2005). https://doi.org/10.1557/JMR.2005.0184

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  • DOI: https://doi.org/10.1557/JMR.2005.0184

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