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Selective growth and kinetic study of copper oxide nanowires from patterned thin-film multilayer structures

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Abstract

Selective growth of CuO nanowires on the etched face of Al2O3/Cu/Al2O3 thin-film multilayer patterns was achieved by ambient oxidation at 400 °C. The nanowires were observed to selectively grow only from the pattern edge with diameter limited by the thickness of Cu thin film. Transmission-electron-microscopy (TEM) characterization confirmed CuO nanowires of a monoclinic CuO growing in the [010] crystallographic direction. Nanowire growth kinetics was studied at 400 °C for different cumulative growth durations with initial growth rates of ∼1 nm/min. A base growth mechanism with kinetics limited by oxygen diffusion through defects of a scaling oxide film is consistent with observed kinetics. The oxygen diffusivity is found to be ∼10−11 cm2/s, consistent with the grain-boundary diffusion of oxygen through polycrystalline copper oxide.

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Acknowledgments

Support was provided by AFOSR under agreement number F49620-02-1-0225. The authors thank The Center of Nanoscale Science and Engineering (CeNSE) and The University of Kentucky Microscopy Center (Mr. L. Rice and Dr. A. Dozier) for providing critical equipment infrastructure. N. Chopra thanks Dr. M.K. Sunkara (University of Louisville) for his helpful discussions.

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  1. Chemical and Materials Engineering Department, University of Kentucky, Lexington, Kentucky, 40506, USA

    Nitin Chopra, Bing Hu & Bruce J. Hinds

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  1. Nitin Chopra
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Correspondence to Bruce J. Hinds.

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Chopra, N., Hu, B. & Hinds, B.J. Selective growth and kinetic study of copper oxide nanowires from patterned thin-film multilayer structures. Journal of Materials Research 22, 2691–2699 (2007). https://doi.org/10.1557/JMR.2007.0377

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