Abstract
Detailed analyses of positron lifetimes in GaAs have shown that an omnipresent type of defect acts as a shallow positron trap. This trap modifies the experimentally determined bulk lifetime to higher values and also influences the trapping rate into deep traps such as vacancies. It is suggested that the shallow trap likely is associated with boron. An annealing stage around 450°C is found.
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References
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Acknowledgement
We are indebted to Dr. J. Lagowski, M.I.T., for supplying the crucial liquid phase electro epitaxially (LPEE) grown samples.
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Dannefaer, S., Mascher, P. & Kerr, D. Annealing of Grown-in Defects in GaAs. MRS Online Proceedings Library 104, 471–474 (1987). https://doi.org/10.1557/PROC-104-471
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DOI: https://doi.org/10.1557/PROC-104-471