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Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

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Abstract

Formation of interfacial dislocations (IDs) and dislocation half-loop arrays (HLAs) and their appearance in 4H-SiC epi-wafers are investigated by X-ray topography and KOH etching analysis. Synchrotron reflection X-ray topography demonstrates the ability to image IDs and HLAs simultaneously and reveal their densities as well as spatial distributions in the epi-wafers. The vertical location of IDs in the epi-wafer is also examined by this technique. The influence of wafer warp, in-situ H2 etching prior to epitaxial growth, substrate off-angle as well as the growth face (Si-face and C-face) on the densities and spatial distributions of IDs and HLAs are discussed.

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Authors and Affiliations

  1. Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, 240-0196, Kanagawa, Japan

    Hidekazu Tsuchida & Isaho Kamata

  2. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, 305-8568, Ibaraki, Japan

    Kazutoshi Kojima, Tetsuo Takahashi & Yuuki Ishida

  3. Showa Denko K.K. (SDK), 1505 Shimokagemori, Chichibu, 369-1871, Saitama, Japan

    Kenji Momose, Michiya Odawara & Keiichi Matsuzawa

Authors
  1. Hidekazu Tsuchida
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  2. Isaho Kamata
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  3. Kazutoshi Kojima
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  4. Kenji Momose
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  5. Michiya Odawara
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  6. Tetsuo Takahashi
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  7. Yuuki Ishida
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  8. Keiichi Matsuzawa
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Tsuchida, H., Kamata, I., Kojima, K. et al. Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy. MRS Online Proceedings Library 1069, 10690403 (2007). https://doi.org/10.1557/PROC-1069-D04-03

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  • DOI: https://doi.org/10.1557/PROC-1069-D04-03

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