Abstract
High-quality p-type a-SiC films were prepared using a new doping gas, B(CH3)3, instead of B2H6. a-SiC films deposited with B(CH3 )1 show high photoluminescence intensity and low defect density. Doping efficiency was also improved by usiyg B(CH3 )3. A module efficiency of more than 9% was achieved for a 100 cm2 a-Si solar cell whose p-layer was doped with B(CH3 )3. A new plasma CVD method, called controlled plasma magnetron (CPM) method was developed to realize high electron-density plasma with low damage to substrate. High conductive p-type μc(microcrystalline)- SiC films were prepared by CPM method with B(CH3 )3. CPM method was found to be suitable not only for preparation of μc films but for high-speed deposition.
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References
Y. Kuwano: Symp. Proc. MRS Spring Meet. (1986) p.455.
Y. Tawada, Y. Hamakawa, et al. : Proc. 15th IEEE Photovoltaic Specialists Conf. (1981) p.245.
Y. Kuwano, et al.: J. Non-Cryst. Solids 97 & 98 (1987) 289.
S. Tsuda, et al.: Jpn. J. Appl. Phys. 26 (1987) 33.
S. Nakano, et al.: Jpn. J. Appl. Phys. 25 (1986) 1936.
Y. Hattori, Y. Hamakawa, et al.: Proc. 18th IEEE Photovoltaic Specialists Conf. (1987) p.689.
A. Matsuda: J. Non-Cryst. Solids 59 & 60 (1983) 767.
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Kuwano, Y., Tsuda, S. High Quality P-Type A-SiC Film Doped with B(Ch3)3 and its Application to A-Si Solar Cells. MRS Online Proceedings Library 118, 557 (1988). https://doi.org/10.1557/PROC-118-557
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DOI: https://doi.org/10.1557/PROC-118-557