Abstract
Microdefects in striated (swirl defects) and nonstriated distribution (D-defects) have been observed in float-zoned crystals doped with various impurities by x-ray topography following copper decoration. A new type of defects were found to be present in swirl-free and D-defect-free regions and to become invisible by doping gallium. This gallium effect led to the conclusion that they are microprecipitates produced from residual oxygen impurity in FZ crystals. Effects of various impurities on defect formation indicate that D-defects are of vacancy agglomerates. It was observed that swirl defects are formed when the temperature gradient near the interface is high, and that their formation is suppressed by doping nitrogen. Formation processes of microprecipitates, swirls, and D-defects are discussed on the basis of observation of their mutual interaction and the impurity effects.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. S. Plaskett, Trans. Met. Soc. AIME 233, 809 (1965).
T. Abe, T. Samlzo, and S. Maruyama, Jpn. J. Appl. Phys. 5, 458 (1966).
A. J. R. de Kock, Appl. Phys. Lett. 16, 100 (1970).
A. A. J. R. de Kock, Philips Res. Rept. Suppl. No. 1 (1973).
H. Föil and B. O. Kolbesen, Appl. Phys. 8, 319 (1975).
P. M. Petroff and A. J. R. de Kock, J. Cryst. Growth 30 117 (1975).
R. J. Roksnoer and M. M. B. Van den Boom, J. Cryst Growth 53, 563 (1981).
T. Abe, H. Harada, and J. Chlkawa in: Procedings of 12th International Conference on Defects and Radiation Effects in Semiconductors, to be published.
For instance, see J. W. Corbett and P. Karins, Nuclear Instr. Methods 182/183, 457 (1981).
A. Seeger and K. P. Chik, Phys. Stat. Solidi 29, 455 (1968).
M. Yoshida, E. Aral, H. Nakamura, and Y. Terunuma, J. Appl. Phys. 45, 1498 (1974).
S. M. Hu, J. Appl. Phys. 45, 1567 (1974).
S. Mizuo and H. Hlguchl, Jpn. J. Appl. Phys. 20, 739 (1981).
S. M. Hu, J. Vac. Sic. Technol. 14 17 (1977).
P. M. Petroff and A. J. R. de Kock, J. Cryst. Growth 35, 4 (1976).
J. Chikawa and S. Shirai, J. Cryst. Growth 39, 328 (1977).
H. Föil, U. Gosele, and B. O. Kolbesen, J. Cryst. Growth 40, 90 (1977).
A. J. R. de Kock, P. J. Roksnoer, and P. G. T. Boonen, J. Cryst. Growth 22, 311 (1974).
W. Keller and A. Mühlbauer, Inst. Phys. Conf. Ser. No. 23, Chap. 8, p. 538 (1975).
T. Abe, Y. Abe, and J. Chikawa in: Semiconductor Silicon, H. R. Huff and R. R. Burgess eds. (Electrochemical Soc. Princeton, 1973) pp. 95–106.
R. A. Craven in: Semiconductor Silicon, H. R. Huff, R. J. Kriegler, and Y. Takeishi eds. (Electrochemical Soc., Rennington, N. J. 1981) p. 670.
J. Chikawa and F. Sato in Defects in Semiconductors, J. Narayan and T. Y. Tan eds. (North-Holland, New York, 1981) pp. 317–332.
F. Sato, T. Sunada, and J. Chikawa, Materials Lett. 1, 111 (1982).
J. Chikawa and S. Shirai, Jpn. J. Appl. Phys. Sappl. 18-1, 153 (1978).
T. Abe, K. Kikuchi, S. Shirai, and S. Muraoka: in Semiconductor Silicon, H. R. Huff, R. J. Kriegler, and Y. Takeishi eds. (Electrochemical Soc., Rennington, N. J. 1981) p. 670.
K. V. Ravi and C. J. Varker: in R. R. Burgess eds. (Electrochemical Soc. Princeton, 1973) Ref. 20, p. 670.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Abe, T., Harada, H. & Chikawa, JI. Microdefects and Impurities in Dislocation-Free Silicon Crystals. MRS Online Proceedings Library 14, 1–17 (1982). https://doi.org/10.1557/PROC-14-1
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-14-1