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Infrared Study of Amorphous Crystalline Phase Transition in an Annealed Amorphous Hydrogenated Silicon Carbon Alloy Film

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Abstract

An amorphous hydrogenated silicon-carbon alloy film (a-Si1−x Cx :H with x = 0.29) was prepared by glow discharge decomposition of a silane and ethylene gas mixture. A careful and detailed investigation of the infrared absorption was undertaken in the range 400 to 4000 cm−1 for both the as-deposited (Ts =250°C) and annealed (up to 1200°C) film. This study demonstrates clearly that there is a structural change from amorphous to microcrystalline at Ta =800°C and then to crystalline phase at Ta =1200°C.

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Authors and Affiliations

  1. Dept. of Physics, Utkal University, Bhubaneswar, 751004, India

    D. K. Basa

  2. Dept. of Physics, City College of New York, New York, 10031, United States

    F. W. Smith

Authors
  1. D. K. Basa
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  2. F. W. Smith
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Basa, D.K., Smith, F.W. Infrared Study of Amorphous Crystalline Phase Transition in an Annealed Amorphous Hydrogenated Silicon Carbon Alloy Film. MRS Online Proceedings Library 162, 439–444 (1989). https://doi.org/10.1557/PROC-162-439

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  • DOI: https://doi.org/10.1557/PROC-162-439

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