Abstract
The structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts (to 4°) between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.
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{nrTRO chip was supplied by the Santa Barbara Research Center program on Manufacturing Technology (MANTECH) for HgCdTe Focal Plane Arrays, Wright Research and Development Center, Wright-Patterson Air Force Base contract No. F33615-86-C-5006.}
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Acknowledgement
The authors thank M. H. Kalisher, D. G. Voros, and R. F. Herald for LPE growth, V. L. Liguori for material characterization, P. S. Villa for hybridization, and S. R. Seay, J J. Choquette- Ortega, and J.H. Deloo for device testing. The authors also thank K. T. Miller for his help with the high-resolution x-ray measurements.
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Johnson, S.M., James, J.B., Ahlgren, W.L. et al. Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays. MRS Online Proceedings Library 216, 141–146 (1990). https://doi.org/10.1557/PROC-216-141
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DOI: https://doi.org/10.1557/PROC-216-141