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Electrical and Optical Properties of Indium Doped Zinc Oxide Films Prepared by Atmospheric Pressure Chemical Vapor Deposition

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Abstract

Indium doped zinc oxide films have been deposited from diethyl zinc, ethanol and trimethyl indium in the temperature range between 225°C and 450°C in a laminar flow atmospheric chemical vapor deposition reactor. Both doped and undoped films were crystalline. The doped films have electron density up to 9×1020 cm−3, conductivity up to 850 Ω−1 cm−1, and mobility up to 8 cm2/Vs. The indium doping increases the average visible absorption from less than 1% to above 20%. The transparency and conductivity of indium doped zinc oxide films are lower than those of fluorine doped films.

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Acknowledgements

This work was supported by the National Renewable Energy Laboratory. The instruments at Harvard university materials research laboratory were also used. We would like to thank Yuan. Z. Lu and David Lange for their assistance in some film characterizations. The Watkins-Johnson Company donated the gas dispersion nozzle.

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Authors and Affiliations

  1. Department of Chemistry, Harvard University, Cambridge, MA, 02138

    Jianhua Hu & Roy G. Gordon

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  1. Jianhua Hu
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  2. Roy G. Gordon
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Hu, J., Gordon, R.G. Electrical and Optical Properties of Indium Doped Zinc Oxide Films Prepared by Atmospheric Pressure Chemical Vapor Deposition. MRS Online Proceedings Library 283, 891–896 (1992). https://doi.org/10.1557/PROC-283-891

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  • DOI: https://doi.org/10.1557/PROC-283-891

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