Abstract
For the first time, GaN pn-junctions were fabricated by hydride vapor phase epitaxy. GaN pn-structures were grown directly on 6H-SiC substrates without any buffer layer. Undoped GaN layers were n-type with Nd-Na concentration ranged from 1×1017 to 5×l018 cm−3. Magnesium was used as an acceptor to grow p-type GaN layers. Mg atomic concentration determined by secondary ion mass spectroscopy ranged from 5×l019 to 5×l020 cm−3. As-grown GaN layers doped with Mg were p-type, and p-type conductivity was improved by post-growth anneal. Mesa diodes with a vertical current flow geometry were formed by reactive ion etching. The position of the GaN pn-junction was determined by the electron beam induced current method. The electrical characteristics of the pn diodes were studied. Electroluminescence from the pn diodes was measured.
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Acknowledgments
We would like to thank V. Soloviev for EBIC measurements, I. Nikitina for X-ray measurements, M. Rastegaeva and E. Kalinina for vacuum metal deposition, and V. Sizov for RIE. This work was partly supported by the Arizona State University.
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Nikolaev, A., Melnik, Y., Kuznetsov, N. et al. GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy. MRS Online Proceedings Library 482, 13–18 (1997). https://doi.org/10.1557/PROC-482-251
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DOI: https://doi.org/10.1557/PROC-482-251