Abstract
The temperature dependence of the thermal expansion and the bulk modulus are critical for predicting the residual stress distribution in epitaxial films and provides information relevant for interatomic potentials and equations of state. The thermal expansions of aluminum nitride (AIN) and gallium nitride (GaN) are calculated with two models that employ the limited elastic and lattice parameter data. These semiempirical models allow prediction of the thermal expansions to higher temperatures. Calculated results are compared with experimental data.
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Acknowledgments
This work is supported by the Army Research Office through Grant No. DAAH04-93-D-0003.
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Wang, K., Reeber, R.R. Thermal Expansion of GaN and AIN. MRS Online Proceedings Library 482, 868–873 (1997). https://doi.org/10.1557/PROC-482-863
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DOI: https://doi.org/10.1557/PROC-482-863