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In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1-xcdx Te Grown by Molecular Beam Epitaxy

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Abstract

Spectral ellipsometry (SE) was applied to in situ composition control of Hg1-xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1-xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1-xCdx.Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1-xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.

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Acknowledgments

The work was supported in part by the Air Force through Rockwell Science Center Prime Contract No. F33615-95-C-5424 and monitored by Lyn Brown. The authors thank Messers. J. Frazier and S.W. Gutzler for their excellent technical assistance.

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Author notes

  1. F. Aqariden

    Present address: Department of Physics, Microphysics Laboratory, M/C 273, University of Illinois at Chicago, 845 W Taylor #2236SES, Chicago, IL, 60607, USA

Authors and Affiliations

  1. Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX, 75265, USA

    R. Dat, F. Aqariden, D. Chandra & H. D. Shih

  2. Texas Instruments Incorporated, Components and Materials Research Center, P. O. Box 655936, MS 147, Dallas, TX, 75265, USA

    W. M. Duncan

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  1. R. Dat
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  2. F. Aqariden
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  3. W. M. Duncan
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  4. D. Chandra
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  5. H. D. Shih
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Dat, R., Aqariden, F., Duncan, W.M. et al. In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1-xcdx Te Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 487, 613–618 (1997). https://doi.org/10.1557/PROC-487-613

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  • DOI: https://doi.org/10.1557/PROC-487-613

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