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Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

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Abstract

A number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25-40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

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Authors and Affiliations

  1. Lucent Technologies Bell Labs., Murray Hill, N.J., 07974, USA

    S. Ohmi & R. T. Tung

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  1. S. Ohmi
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  2. R. T. Tung
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Ohmi, S., Tung, R.T. Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step. MRS Online Proceedings Library 564, 117–122 (1999). https://doi.org/10.1557/PROC-564-117

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