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Effects of Nano-scale Colloidal Abrasive Particle Size on SiO2 by Chemical Mechanical Polishing

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Abstract

This paper reports on the effect of colloidal abrasive particle size in the polishing of thermally grown silicon dioxide on 100mm diameter, P-type, (100), single crystal silicon wafers. The abrasive particle sizes were varied in six (6) slurries with pH values of 10.97 ± 0.08. The abrasive sizes were 10, 20, 50, 80, 110 and 140nm in diameter, and the slurry contained 30 weight percent abrasives. The experimental results indicate that the material removal rate (MRR) varies with the volume of the particle size. Results also confirm that there exists an optimum abrasive particle size with respect to material removal rate and surface finish. For a pad surface roughness of 5.2μm (Ra), the slurry containing 80nm particles resulted in the highest material removal rate and best surface finish. A nano-film model based on the pad roughness is used to explain the results.

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Authors and Affiliations

  1. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0405, USA

    Chunhong Zhou, Lei Shan, S. H. Ng, Robert Hight & S. Danyluk

  2. Chemical Products Corporation (dba Precision Colloids, LLC), Cartersville, GA, 30120, USA

    Andrew J. Paszkowski

Authors
  1. Chunhong Zhou
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  2. Lei Shan
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  3. S. H. Ng
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  4. Robert Hight
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  5. Andrew J. Paszkowski
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  6. S. Danyluk
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Zhou, C., Shan, L., Ng, S.H. et al. Effects of Nano-scale Colloidal Abrasive Particle Size on SiO2 by Chemical Mechanical Polishing. MRS Online Proceedings Library 671, 16 (2001). https://doi.org/10.1557/PROC-671-M1.6

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  • DOI: https://doi.org/10.1557/PROC-671-M1.6

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