Abstract
Multi-layered epitaxial Pb(Zrx,Ti1-x)O3 (PZT) films of x=0.2–0.5 were deposited on La0.5Sr0.5CoO3-x (LSCO)/ (001)STO and LSCO/CeO2/YSZ/(001)Si substrates with buffer layers. It was investigated how the 90° domain structure and the P-E hysteresis character depend on the difference of the thermal expansion coefficient by changing the Zr/Ti composition and the substrates, using HRTEM and XRD methods. XTEM analysis showed that usual lamella configuration of 90° domains of 8–30nm in width penetrated the columnar grain and the PZT layer in the PZT stacked film of Zr/Ti=20/80, 30/70, 40/60. On the other hand, the close-packed 90° domains of 4–5nm in width existed in a epitaxial columnar grain in the PZT50/50 stacked film. The P-E hysteresis loops of PZT20/80 stacked films deposited on STO and Si substrates show the remanent polarization of 2Pr=136μC/cm2, 2Pr=80μC/cm2, respectively. On the other hands, those of PZT50/50 stacked films deposited on STO and Si substrates show the polarization of 2Pr=125μC/cm2, 2Pr=36μC/cm2, respectively. Thus, the P-E hysteresis loop of PZT50/50 has remarkable difference of 2Pr between the substrates.
Similar content being viewed by others
References
C.A.Araujo, L.D.MacmMillan, B.M.Melnick, J.D.Cuchiaro, and J.F.Scott, Ferroelectrics, 104. 241 (1990)
R.E.Johnes, P.Zu”rcher, P.Chou, D,J, Taylor, Y.T.Lii, B.Jiang, P.D.Maniar, and S.J. Gillespie, Microelectron. Eng., 29, 3 (1995)
M. Suzuki, J.Ceram.Soc.Japan, 103, 1099 (1995)
C.S.Ganpule,V.Nagarajan,H.Li,A.S.Ogale,A.D.Martinez,S.B.Ogale,S.A.Aggarwal.E.Willi ams,P.De.Wolf,and R.Ramesh, Integrated Ferroelectrics, 32, 199 (2001)
A.YU.Emelyanov and N.A.Pertsev, Iintegrated Ferroelectrics, 32, 343 (2001)
J.S.Speck,A.Seifert,W.Pompe, and R.Ramesh, J.Appl.Phys, 76, 477 (1994)
S.P.Alpay,V.Nagarajan,L.A.Vendersky,M.D.Vaudin,S.Aggarwal,R.Ramesh,andA.L.Roytb urd,.Appl.Phys., 85, 3271 (1999)
C.M.Foster, Z.Li, M.Buckett, D.Miller, P.M.Baldo, L.E.Rehn, G.R.Bai, D.Guo, H.You, and K.L.Merkel, J.Appl.Phys., 78, 2607 (1995)
C.D.Theis and D.G.Schlom, J.Mater.Sci, 12, 1297 (1997)
M.A.Novojilov, A.R.Kaul, O.Y.Gorbrnoko, G.Wahl, and U. Krause, Integrated Ferroelectrics, 33, 79 (2001)
B.A.Tuttle, J.A.Voigt, D.C.Goodnow., D.L.Lamppa, T.J.Headley, M.O.Eatough, G.Zenner, R.D.Nasby, and S.M.Rodgers, J.Am.Ceram. Soc.,76, 1537–44 (1993)
L.Sagalowicz, Pmuralt, S.Hiboux, T.Maeder, K.Brooks, Z.Kighelman and N. Setter, Mat. Res. Soc. Symp. Proc 596, Pittsburgh, PA, 265 (2000)
J.H. Kim, Y.Kim, A.T..Chen, and F.F.Lange, J.Mater.Res..,16, 1739 (2001)
] J.LEE, L.Johnson, A.Safari,R.Ramesh, T.Sands, H.Glichrist, and V.G.Keramidas, Appl.Phys.Lett., 63,27 (1993)
K.Y.Kim, H.I.Hwang, J.Y.Lee, and W.K.Choo, Mat. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 197 (1992)
S.G.Ghonge, E.Goo, R.Ramesh, T.Sands and V.G.Keramidas, Appl. Phys. Lett., 63, 1628 (1993)
P.Twai, T. Zheleva, and J,Narajayan, Appl. Phys. Lett., 63, 30 (1993)
C.H.Lin, B.M.Yen, H.C.Kuo, H.Chen, T.B.Wu, and G.E.Stillman, J.Mater.Res., 15, 115 (2000)
K.S.Lee, Y.M.Kang, and S.Baik, J.Mater Res, 14, 132 (1999)
A.L.Roytburd and Y.Yu, Ferroelectrics, 144,137 (1993)
S.P.Alpay and A.L.Roytburd, Mat. Res. Soc. Symp. Proc. 474 Pittsburgh, PA,407 (1997)
A.E.Romanov, W.Pompe, and J.S.Speck, J.Appl.Phys., 79, 4037 (1996)
J.S.Speck,A.Seifert,W.Pompe, and R.Ramesh, J.Appl.Phys, 76, 466 (1994)
N.A.Pertsev and A.G.Zembilgotov, J.Appl.Phys.,80,6401 (1996)
C.Pellet, Thin Solid Films, 175 .23 (1989)
A. Bardal, Th. Matthee , J. Wecker, and K.Samwer, J. Appl. Phys. 75, 2902 (1994)
T. Hirai, K. Teramoto, H. Koike, K. Nagashima, and Y. Tarui, Jpn. J. Appl. Phys. 36, 5253 (1997)
S.Horita, M.Watanabe, and A.Masuda, Mater. Sci. Eng.. B54, 79 (1998)
T.Matthee, J.Wecker, H.Behner, g.Friedl,O.Eibl, and K.Samwer, Appl.Phys.Lett.,61,1240 (1992)
A.Baadal,Mzwerger, O.Eibl, J.Wecker, and T.Metthee, Appl.Phys.Lett.,61,1243 (1992)
A.Bardal, O.Eibl,T.Matthee, G.Friedl, and J.Wecker, J.Mater.Res., 8,2112 (1993)
Y.M.Kang and S.Baik, J.Appl.Phys., 82, 2532 (1997)
B.S.Kwak, A.Eibl, J.D.Budai, M.F.Chrisholm,L.A.Boatner, and B.J.Wilkens, Phys.Rev., B49, 14865 (1994)
V.V.Elemkin, V. G. Smotrakov, and E.G. Fesenko, Ferroelectrics, 110, 137 (1990)
M.Keijeser, D.M.Leeuw, P.J.Veldhoven, A.E.M.De Veirmean, D.G. Neerinck, and G.J.M.Dormans, Thin Solid Films, 266, 157 (1995)
S.Stemer, S.K.Streiffer, W-Y. Hsu, F.Ernst, R.Raj, and M. Ruhle, J.Mater.Res, 10, 791 (1995)
M.Foeth, A. Sfera, P.Stadelmann and P.-A. Buffat, Journal of Electron Microscope, 48,717 (1999)
M.J.Huan, E.Furman, S.J.Jang and L.E.Cross, Ferroelectrics, 99, 63 (1989)
R.Ramesh, Extended abstract of IUMRS-ICEM2002, 636 (2002)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kiguchi, T., Wakiya, N., Shinozaki, K. et al. Hrteminvestigation of 90° Domain Configureuration and P-E Hysteresis Loop of Epitaxial PZT Multilayered Thin Films. MRS Online Proceedings Library 748, 51 (2002). https://doi.org/10.1557/PROC-748-U5.1
Published:
DOI: https://doi.org/10.1557/PROC-748-U5.1