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Solid-state growth of nickel silicide nanowire by the metal-induced growth method

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Abstract

Unique nanowire growth was accomplished at 575 °C by the metal-induced growth (MIG) method. This involved a spontaneous reaction between metal and Si. The deposited metal worked as a catalyst layer to grow nanowires in the solid state. Various metals (Ni, Co, and Pd) were used in MIG nanowire fabrication, and the Ni-induced case was successful in demonstrating that metal species should be the dominant factor for growing nanowires. The Ni to Si composition was studied by energy dispersive spectroscopy showing the Ni diffusion inside the nanowire as well as the Ni silicide layer. The practical application of the MIG nanowire was proved by fabricating nanoscale contacts.

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Authors and Affiliations

  1. Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York, 14260, USA

    Joondong Kim, Jong-Uk Bae & Wayne A. Anderson

  2. School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea

    Hyun-Mi Kim & Ki-Bum Kim

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  1. Joondong Kim
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  2. Jong-Uk Bae
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  3. Wayne A. Anderson
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  4. Hyun-Mi Kim
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  5. Ki-Bum Kim
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Correspondence to Wayne A. Anderson.

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Kim, J., Bae, JU., Anderson, W.A. et al. Solid-state growth of nickel silicide nanowire by the metal-induced growth method. Journal of Materials Research 21, 2936–2940 (2006). https://doi.org/10.1557/jmr.2006.0364

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  • DOI: https://doi.org/10.1557/jmr.2006.0364

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