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Dielectric properties and energy storage capability of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film-on-foil capacitors

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Abstract

Antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (EAF ≈ 270 kV/cm) and that for the reverse phase transition (EFA ≈ 230 kV/cm) were measured at room temperature on samples with PLZT films of ≈1-µm thickness. Relative permittivity of ≈560 and dielectric loss of <0.05 were measured near zero DC bias field. Hysteresis loop analysis showed that energy densities of ≈53 and 37 J/cm3 can be stored and recovered from the film-on-foil capacitors at 25 and 150 °C, respectively. Highly accelerated life tests were conducted. The projected mean time to failure is >5000 h when the capacitors are operated at room temperature with an applied field of ≈300 kV/cm.

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References

  1. W. Pan, Q. Zhang, A. Bhalla and L.E. Cross: Field-forced anti-ferroelectric-to-ferroelectric switching in modified lead zirconate titanate stannate ceramics. J. Am. Ceram. Soc. 72, 571 (1989).

    CAS  Google Scholar 

  2. K. Yamakawa, S. Trolier-Mckinstry, J.P. Dougherty and S.B. Krupanidhi: Reactive magnetron co-sputtered antiferroelectric lead zirconate thin films. Appl. Phys. Lett. 67, 2014 (1995).

    CAS  Google Scholar 

  3. I.W. Kim, D.S. Lee, S.H. Kang and C.W. Ahn: Antiferroelectric characteristics and low frequency dielectric dispersion of Pb1.075 La0.025(Zr0.95Ti0.05)O3 thin films. Thin Solid Films 441, 115 (2003).

    CAS  Google Scholar 

  4. J.P. Dougherty, K.W. Gachigi, T.R. Shrout, S.J. Jang, C.A. Randall and P.M. Pruna: Cardiac defibrillator with multi-phase ferroelectric/antiferroelectric capacitor. U.S. Patent No. 5728138 (March 17, 1998).

    Google Scholar 

  5. A. Pelaiz-Barranco, J.D.S. Guerra, O. Garcia-Zaldivar, F. CalderonPinar, E.B. Araujo, D.A. Hall, M.E. Mendoza and J.A. Eiras: Effects of lanthanum modification on dielectric properties of Pb(Zr0.90,Ti0.10)O3 ceramics: Enhanced antiferroelectric stability. J. Mater. Sci. 43, 6087 (2008).

    CAS  Google Scholar 

  6. B. Ma, D.K. Kwon, M. Narayanan and U. Balachandran: Leakage current characteristics and dielectric breakdown of antiferro-electric Pb0.92La0.08Zr0.95Ti0.05O3 film capacitors grown on metal foils. J. Phys. D: Appl. Phys. 41, 205003 (2008).

    Google Scholar 

  7. V.M. Ishchuk, V.N. Baumer and V.L. Sobolev: The influence of the coexistence of ferroelectric and antiferroelectric states on the lead lanthanum zirconate titanate crystal structure. J. Phys. Con-dens. Matter 17, L177 (2005).

    CAS  Google Scholar 

  8. B. Ma, D.K. Kwon, M. Narayanan and U. Balachandran: Fabrication of antiferroelectric PLZT films on metal foils. Mater. Res. Bull. 44, 11 (2009).

    CAS  Google Scholar 

  9. L.B. Kong and J. Ma: Preparation and characterization of antiferroelectric PLZT2/95/5 thin films via a sol–gel process. Mater. Lett. 56, 30 (2002).

    CAS  Google Scholar 

  10. R. Seveno, H.W. Gundel and S. Seifert: Preparation of antiferro-electric PbZrxTi1-xO3 thin films on LaSrMnO3-coated steel substrates. Appl. Phys. Lett. 79, 4204 (2001).

    CAS  Google Scholar 

  11. Q. Zou, H.E. Ruda and B.G. Yacobi: Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers. Appl. Phys. Lett. 78, 1282 (2001).

    CAS  Google Scholar 

  12. B. Ma, M. Narayanan and U. Balachandran: Dielectric strength and reliability of ferroelectric PLZT films deposited on nickel substrates. Mater. Lett. 63, 1353 (2009).

    CAS  Google Scholar 

  13. R.G. Polcawich, C-N. Feng, S. Kurtz, S. Perini, P.J. Moses and S. Trolier-McKinstry: AC and DC electrical stress reliability of piezoelectric lead zirconate titanate (PZT) thin films. Int.J. Microcircuits Electron Packag. 23, 85 (2000).

    CAS  Google Scholar 

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Authors and Affiliations

  1. Energy Systems Division, Argonne National Laboratory, Argonne, Illinois, 60439, USA

    Beihai Ma, Do-Kyun Kwon, Manoj Narayanan & U. (Balu) Balachandran

  2. Materials Engineering Department, Korea Aerospace University, Gyeonggi-do, Korea

    Do-Kyun Kwon

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  1. Beihai Ma
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  2. Do-Kyun Kwon
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  3. Manoj Narayanan
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  4. U. (Balu) Balachandran
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Correspondence to Beihai Ma.

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Ma, B., Kwon, DK., Narayanan, M. et al. Dielectric properties and energy storage capability of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film-on-foil capacitors. Journal of Materials Research 24, 2993–2996 (2009). https://doi.org/10.1557/jmr.2009.0349

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  • DOI: https://doi.org/10.1557/jmr.2009.0349

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