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Influence of indium addition on electromigration behavior of solder joint

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Abstract

The electromigration (EM) behavior of the Cu/Sn-In/Cu solder model strip was investigated under the conditions of high electrical current density (10 kA/cm2) at various temperatures. The composition of indium (In) was 0, 4, 8, and 16 in wt%. The interconnection of Sn-In solder alloys with a Cu substrate was prepared by reflow soldering at 250 °C. Micro structural analysis confirmed that primary intermetallic compound formed at the interface of the Cu/Sn-In strip was Cu6(In,Sn)5 regardless of In contents. Sn grain size became finer as In content increased. After current stressing, electrical failure was caused by the formation of voids and cracks at the cathode because of the migration of Cu atoms. Sn-16In alloy that has fine grain structure exhibits excellent EM resistance primarily due to the retardation of Cu migration.

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Acknowledgment

This work was supported by KAKENHI (Grant No. 21246109): Grant-in-Aid for Scientific Research (A). And the authors would like to thank the electron probe micro-analyzer analysis for this research by Institute of Science and Industrial Research Comprehensive Analysis Center of Osaka University.

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Authors and Affiliations

  1. Graduate School of Engineering, Osaka University, Osaka, 567-0047, Japan

    Kiju Lee

  2. Fusion Technology Lab., Hoseo University, Asan, 336-795, Korea

    Keun-Soo Kim

  3. Institute of Science and Industrial Research, Osaka University, Osaka, 567-0047, Japan

    Katsuaki Suganuma

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  1. Kiju Lee
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  2. Keun-Soo Kim
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  3. Katsuaki Suganuma
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Correspondence to Kiju Lee.

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Lee, K., Kim, KS. & Suganuma, K. Influence of indium addition on electromigration behavior of solder joint. Journal of Materials Research 26, 2624–2631 (2011). https://doi.org/10.1557/jmr.2011.283

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