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On the identification of Sb2Se3 using Raman scattering

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Abstract

Robust evidences are presented showing that the Raman mode around 250 cm−1 in the Sb2Se3 thin films does not belong to this binary compound. The laser power density dependence of the Raman spectrum revealed the formation of Sb2O3 for high values of laser intensity power density excitation under normal atmospheric conditions. To complement this study, the Sb2Se3 films were characterized by x-ray diffraction during in situ annealing. Both these measurements showed that the Sb2Se3 compound can be replaced by Sb2O3. A heat-assisted chemical process explains these findings. Furthermore, Raman conditions required to perform precise measurements are described.

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Acknowledgments

P. M. P. Salome acknowledges the funding of Fundacao para Ciencia e Tecnologia (FCT) through the project IF/00133/2015. B. Vermang has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement no 715027). A. Shongalova acknowledges the funding of Erasmus + program 2016/17. This work was funded by FEDER funds through the COMPETE 2020 Program and by FCT–Portuguese Foundation for Science and Technology under the projects UID/CTM/50025/2013.

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Authors and Affiliations

  1. Departamento de Física and I3N, Universidade de Aveiro, 3810-193, Aveiro, Portugal

    A. Shongalova, M. R. Correia, P. M. P. Salomé & P. A. Fernandes

  2. Satpayev University, Satpayev street, 22a, 050013, Almaty City, Kazakhstan

    A. Shongalova

  3. University of Hasselt - Partner in Solliance, Agoralaan gebouw H, Diepenbeek, 3590, Belgium

    B. Vermang

  4. Imec - Partner in Solliance, Kapeldreef 75, Leuven, 3001, Belgium

    B. Vermang

  5. Imomec - Partner in Solliance, Wetenschapspark 1, Diepenbeek, 3590, Belgium

    B. Vermang

  6. International Iberian Nanotechnology Laboratory, 4715-330, Braga, Portugal

    J. M. V. Cunha, P. M. P. Salomé & P. A. Fernandes

  7. Departamento de Física, CIETI, Instituto Superior de Engenharia do Porto, Instituto Politécnico do Porto, Rua Dr. António Bernardino de Almeida, 431, 4200-072, Porto, Portugal

    P. A. Fernandes

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  1. A. Shongalova
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  2. M. R. Correia
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  4. J. M. V. Cunha
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Correspondence to P. A. Fernandes.

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Shongalova, A., Correia, M.R., Vermang, B. et al. On the identification of Sb2Se3 using Raman scattering. MRS Communications 8, 865–870 (2018). https://doi.org/10.1557/mrc.2018.94

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