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In situ electron microscopy of ferroelectric domains

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Abstract

This article reviews current progress in research in ferroelectric switching phenomena using in situ electron microscopy. We focus on state-of-the-art instrumentation, analytical methods, experimental procedures, and image contrast mechanisms. Particular emphasis is on ferroelectric domain and domain wall structures that determine ferroelectric behaviors. The applicability of in situ microscopy to studying a wide range of switching phenomena, such as domain nucleation, domain wall motion, and domain wall pinning by various types of defects, in ferroelectric thin films is demonstrated. The underlying physics of these dynamic processes is also discussed.

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Acknowledgements

We gratefully acknowledge our collaborators for sharing their insights and helping us to explore and better understand the exciting research on ferroelectric domain switching. We especially thank the groups of D.G. Schlom, C.B. Eom, L.Q. Chen, Y.H. Chu, and R. Ramesh. The authors would like to acknowledge financial support from the US Department of Energy (DOE) under grant DE-FG02-07ER46416.

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  1. Department of Materials Science and Engineering, University of Michigan, USA

    Linze Li, Jacob R. Jokisaari & Xiaoqing Pan

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  1. Linze Li
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Li, L., Jokisaari, J.R. & Pan, X. In situ electron microscopy of ferroelectric domains. MRS Bulletin 40, 53–61 (2015). https://doi.org/10.1557/mrs.2014.302

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