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Fabrication of a p-NiO/n-Si Heterojunction Diode by UV Oxidation of Ni Deposited on n-Si

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Abstract

The metallic nickel (Ni) deposited on an n-Si substrate with resistivity of 4 – 6 Ω.cm was oxidized by the ultra-violet (UV) oxidation technique to form a p-NiO/n-Si heterojunction diode. The rectifying current-voltage (I-V) characteristic confirmed formation of a pn junction. The capacitance-voltage (C-V) characteristic further identified an abrupt p+n junction between NiO and n-Si. The photocurrent increased with the increased wavelength of laser under illumination of the diode. The voltage-dependent photocurrent suggests that the carriers generated in the depletion region of Si was effectively collected but not outside the depletion region. A low diffusion length of holes was attributed to Ni diffusion in Si caused by the substrate heating during the UV oxidation.

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Authors and Affiliations

  1. Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, 182-8585, Chofu-shi, Tokyo, Japan

    Dongyuan Zhang, Kazuo Uchida & Shinji Nozaki

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  1. Dongyuan Zhang
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  2. Kazuo Uchida
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  3. Shinji Nozaki
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Zhang, D., Uchida, K. & Nozaki, S. Fabrication of a p-NiO/n-Si Heterojunction Diode by UV Oxidation of Ni Deposited on n-Si. MRS Online Proceedings Library 1494, 305–309 (2012). https://doi.org/10.1557/opl.2013.520

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  • DOI: https://doi.org/10.1557/opl.2013.520

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