1989 Volume 97 Issue 1132 Pages 1478-1485
The high thermal conducting mechanism of AlN ceramics has been investigated by the relationship between microstructure and thermal conductivity of the samples which were obtained by pressureless-sintering at 1900°C for 1-24h with Y2O3 2 at% addition as a sintering aid. The thermal conductivity increased gradually with increasing sintering time from 199W/m·K at 1h to 266W/m·K at 24h. Microstructure was investigated by SEM, TEM and powder X-ray diffraction together with quantitative analysis of Y and O contents. AlN grain size increased from 4μm at 1h to 12μm at 24h and the grain boundary phase gradually concentrated to triple points and the amount of this phase decreased with sintering time. Furthermore, grain boundary phase composition changed from Al2Y4O9(Al2O3⋅2Y2O3) at 1h to Y2O3 at 24h. This change seems to occur through selective reduction and nitrization of Al2O3 in Al2Y4O9 with an increase in sintering time. These results show that the decrease in phonon scattering at grain boundaries improves the thermal conductivity.