Processing and Application of Ceramics 2017 Volume 11, Issue 3, Pages: 171-176
https://doi.org/10.2298/PAC1703171S
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Structural and electrical characteristics of gallium modified PZT ceramics
Sharma Pulkit (Siksha O Anusandhan University, Department of Electrical and Electronics Engineering, Bhubaneswar, India)
Hajra Sugato (Siksha O Anusandhan University, Department of Electrical and Electronics Engineering, Bhubaneswar, India)
Sahoo Sushrisangita (Siksha O Anusandhan University, Department of Physics, Multifunctional and Advanced Materials Research Lab, Bhubaneswar, India)
Rout Pravat Kumar (Siksha O Anusandhan University, Department of Electrical and Electronics Engineering, Bhubaneswar, India)
Choudhary Ram Naresh Prasad (Siksha O Anusandhan University, Department of Physics, Multifunctional and Advanced Materials Research Lab, Bhubaneswar, India)
In the present paper, the gallium modified lead zirconate titanate ceramics
with Zr/Ti = 48/52 (near the morphotropic phase boundary,MPB), having a
chemical formula Pb0.98Ga0.02(Zr0.48Ti0.52)0.995O3, was synthesized by a
mixed-oxide reaction method and sintered. Analysis of phase formation
confirmed the co-existence of two phases (tetragonal and monoclinic
symmetry) in the system. Microstructural study by scanning electron
microscope showed a non-uniform distribution of large grains over the sample
surface and presence of a small amount of micro-size pores. Modulus and
impedance studies were carried out at various frequencies (1 kHz-1MHz) and
temperatures (300-350°C) and showed the contributions of grains in
capacitive and resistive properties of the material. The resistance and
capacitance of the complex impedance plots are contributed by grains as
observed from the Nyquist plots. The experimental data obtained from the
Nyquist plot were implemented in an equivalent electrical circuit (RQC). The
value of grain resistance and capacitance were obtained using fitting steps
with precision at all temperatures. It is assumed that increase of
dielectric constant at higher temperatures is due to the substitution of Ga+
ions at the Pb-site.
Keywords: Pb(Zr, Ti)O3, solid-state synthesis, structural characterization, electrical and dielectric properties