Nanoparticle photoresists from HfO2 and ZrO2 for EUV patterning

Markos Trikeriotis; Marie Krysaki; Yeon Sook Chung; Christine Ouyang; Brian Cardineau; Robert Brainard; Christopher K. Ober; Emmanuel P. Giannelis; Kyiungyong Cho

doi:10.2494/photopolymer.25.583

Nanoparticle photoresists from HfO₂ and ZrO₂ for EUV patterning

Markos Trikeriotis, Marie Krysaki, Yeon Sook Chung, Christine Ouyang, Brian Cardineau, Robert Brainard, Christopher K. Ober, Emmanuel P. Giannelis, Kyiungyong Cho

Author information

Markos Trikeriotis
Dept. of Materials Science and Engineering, Cornell University
Marie Krysaki
Dept. of Materials Science and Engineering, Cornell University
Yeon Sook Chung
Dept. of Materials Science and Engineering, Cornell University
Christine Ouyang
Dept. of Materials Science and Engineering, Cornell University
Brian Cardineau
College of Nanoscale Science and Engineering, University at Albany
Robert Brainard
College of Nanoscale Science and Engineering, University at Albany
Christopher K. Ober
Dept. of Materials Science and Engineering, Cornell University
Emmanuel P. Giannelis
Dept. of Materials Science and Engineering, Cornell University
Kyiungyong Cho
SEMATECH Inc.

Keywords: EUV lithography, inorganic photoresist, hafnium oxide, zirconium oxide, nanoparticles, etch resistance

JOURNAL FREE ACCESS

2012 Volume 25 Issue 5 Pages 583-586

DOI https://doi.org/10.2494/photopolymer.25.583

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Abstract

Performance requirements for EUV resists will demand the development of entirely new resist platforms. A challenge in designing these new HfO₂ and ZrO₂ nanoparticle resists is the selection of molecular structures that will provide both superior performance in imaging and etch resistance while maintaining optimal absorbance at EUV wavelengths. We have previously described the use of inorganic nanoparticle photoresists for 193 nm and e-beam lithography. These inorganic photoresists are made of oxide nanoparticles and have shown etch resistance that is 25 times higher than polymer resists. The high etch resistance of these materials allow the processing of very thin films (< 40 nm) and will help push the resolution limits below 20 nm without pattern collapse. Additionally, the small size of the nanoparticles (< 5 nm) leads to low LER. In this presentation we show that these inorganic resists can be applied to EUV lithography. We have successfully achieved high resolution patterning (<30 nm) with very high sensitivity and low LER.

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