Abstract
Photoelectric properties of monocrystalline silicon with multiply charged nanoclusters are studied that generate “silicon clusters,” i.e., nano-sized graded band gap structures. Multiply charged nanoclusters of manganese atoms strongly influence the photoelectric properties of monocrystalline silicon and expand the range of spectral sensitivity up to 8 μm; the photoelectric sensitivity reaches ∼109. Conditions occur for the emergence of photo-emf in such a material in the infrared region when hν< E g . The obtained experimental data expand the functional capabilities for the application of silicon with multiply charged impurity atoms.
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Kwang-Hyuk Choia, Johoon Kimb, Young-Jin Nohc, et al., Ag nanowire-embedded ITO films as a nearinfrared transparent and flexible anode for flexible organic solar cells, Solar Energy Mater. Solar Cells, 2013, vol. 110, pp. 147–153.
de Wild, J., Rath, J.K., Meijerink, A., et al., Enhanced near-infrared response of a-Si: H solar cells with β-NaYF4: Yb3+ (18%), Er3+ (2%) upconversion phosphors, Solar Energy Mater. Solar Cells, 2010, vol. 94, no. 12, pp. 2395–2398.
Guenther, K.-M., Baumann, A.L., Gimpel, T., Kontermann, S., and Schade, W., Tandem solar cell concept using black silicon for enhanced infrared absorption, Proc. 2nd Int. Conf. on Crystalline Silicon Photovoltaics Silicon PV2012. Energy Procedia, 2012, vol. 27, pp. 555–560.
Abdurakhmanov, B.A., Ayupov, K.S., Bakhadyrkhanov, M.K., et al., Low-temperature diffusion of additions in silicon, Dokl. Uzb. Akad. Nauk, 2010, no. 4, pp. 32–36.
Askarov, Sh.I., Bakhadirkhanov, M.K., Masterov, V.F., and Shtel’makh, V.F., The way to research S and Mg inter-addition interaction in silicon by means of EPR method, Fiz. Tekh. Poluprovodn., 1982, vol. 16, no. 7, pp. 1308–1310.
Bakhadyrkhanov, M.K., Mavlonov, G.Kh., Isamov, S.B., et al., Transport properties of silicon doped with manganese via low-temperature diffusion, Inorg. Mater., 2011, vol. 47, no. 5, pp. 479.
Bakhadyrkhanov, M.K., Ayupov, K.S., Mavlyanov, G.Kh., et al., Photoconductivity of silicon with magnesium atoms nanoclusters, Mikroelektronika, 2010, vol. 39, no. 6, pp. 426–429.
Mil’vidskii, M.G. and Chaldyshev, V.V., Nanosized atomic clusters in semiconductors: a new approach to form materials properties, Fiz. Tekh. Poluprovodn., 1998, vol. 32, no. 5, pp. 513–518.
Fistul’, V.I., Vvedenie v fiziku poluprovodnikov: Ucheb. posobie dlya VUZov (Introduction into Semiconductors Physics. Student’s Book for High School), Moscow: Vysshaya shkola, 1984.
Bakhadyrkhanov, M.K., Isamov, S.B., Zikrillaev, N.F., and Khaidarov, K., Nanosized variable structure in silicon with multiply charged nanoclusters, Mikroelektronika, 2013, vol. 42, no. 6, pp. 444–446.
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Original Russian Text © M.K. Bakhadyrkhanov, S.B. Isamov, Kh.M. Iliev, S.A. Tachilin, K.U. Kamalov, 2014, published in Geliotekhnika, 2014, No. 2, pp. 3–5.
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Bakhadyrkhanov, M.K., Isamov, S.B., Iliev, K.M. et al. Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures. Appl. Sol. Energy 50, 61–63 (2014). https://doi.org/10.3103/S0003701X14020054
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DOI: https://doi.org/10.3103/S0003701X14020054