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Image contrast in the backscattered electron mode in scanning electron microscopy and microtomography

  • Proceedings of the XXIII Russian Conference on Electron Microscopy
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The problem of image contrast production in the backscattered electron (BSE) mode in a scanning electron microscope (SEM) in bulk and film structures is discussed. The considerable influence of the parameters of a semiconductor detector on the image contrast is shown. Calculations for contrast in dependence on the composition of target sections, the energy of primary electrons, and the signal detection technique are presented.

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Authors and Affiliations

  1. Institute of Physics Technology, Russian Academy of Sciences, Moscow, 141700, Russia

    N. A. Orlikovsky

  2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    E. I. Rau

Authors
  1. N. A. Orlikovsky
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  2. E. I. Rau
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Corresponding author

Correspondence to E. I. Rau.

Additional information

Original Russian Text © N.A. Orlikovsky, E.I. Rau, 2011, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2011, Vol. 75, No. 9, pp. 1305–1311.

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Orlikovsky, N.A., Rau, E.I. Image contrast in the backscattered electron mode in scanning electron microscopy and microtomography. Bull. Russ. Acad. Sci. Phys. 75, 1234–1239 (2011). https://doi.org/10.3103/S1062873811090218

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  • DOI: https://doi.org/10.3103/S1062873811090218

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