Abstract
The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.
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Original Russian Text © D.S. Abramkin, M.O. Petrushkov, E.A. Emel’yanov, M.A. Putyato, B.R. Semyagin, A.V. Vasev, M.Yu. Esin, I.D. Loshkarev, A.K. Gutakovskii, V.V. Preobrazhenskii, T.S. Shamirzaev, 2018, published in Avtometriya, 2018, Vol. 54, No. 2, pp. 85–92.
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Abramkin, D.S., Petrushkov, M.O., Emel’yanov, E.A. et al. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. Optoelectron.Instrument.Proc. 54, 181–186 (2018). https://doi.org/10.3103/S8756699018020103
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DOI: https://doi.org/10.3103/S8756699018020103