Abstract
Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.
Kurzfassung
Für den vorliegenden Beitrag wurden Lanthan (La)-modifizierte Blei-Zirkonat-Titanat-Dünnschichten (PLZT) mit Konzentrationen von 0 bis 5 at.-% mittels Sol-Gel-Verfahrens hergestellt, um die Auswirkungen der La-Zusätze auf die kristalline Orientierung, Mikrostruktur und die dielektrischen Eigenschaften der Schichten zu untersuchen. Die Charakterisierung der PLZT-Dünnschichten erfolgte mittels Röntgendiffraktometrie (XRD), Rasterelektronenmikroskopie (REM) und Präzisionsimpedanzanalyse. Die XRD-Analyse zeigte, dass die PLZT-Filme mit einer La-Konzentration unter 4 at.-% eine bevorzugte (100)-Orientierung aufwiesen. Wenn die La-Zugabe unter 3 at.-% betrug, deuten die REM-Ergebnisse darauf hin, dass die PLZT-Dünnschichten über eine dichte und säulenartige Mikrostruktur verfügen, während die anderen eine säulenartige Struktur nur am Fuß des Querschnittes aufwiesen. Die maximale Dielektrikumskonstante (1502.59 bei 100 Hz) ergab sich für den Film mit 2 at.-% La, was eine Zunahme von 53.9 % gegenüber dem La-freien Film bedeutet. Ohne Einführung einer Keimlage konnten die (100)-orientierten PLZT-Dünnschichten mittels konventioneller Wärmebehandlungsverfahren und unter Anpassung der La-Zugabe hergestellt werden.
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