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Licensed Unlicensed Requires Authentication Published by De Gruyter October 2, 2017

Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

Auswirkung des Lanthan-Zusatzes auf die kristalline Orientierung, Mikrostruktur und dielektrischen Eigenschaften von PZT-Dünnschichten
  • Wencai Xu , Qi Li , Zhifu Yin , Xing Wang and Helin Zou
From the journal Materials Testing

Abstract

Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

Kurzfassung

Für den vorliegenden Beitrag wurden Lanthan (La)-modifizierte Blei-Zirkonat-Titanat-Dünnschichten (PLZT) mit Konzentrationen von 0 bis 5 at.-% mittels Sol-Gel-Verfahrens hergestellt, um die Auswirkungen der La-Zusätze auf die kristalline Orientierung, Mikrostruktur und die dielektrischen Eigenschaften der Schichten zu untersuchen. Die Charakterisierung der PLZT-Dünnschichten erfolgte mittels Röntgendiffraktometrie (XRD), Rasterelektronenmikroskopie (REM) und Präzisionsimpedanzanalyse. Die XRD-Analyse zeigte, dass die PLZT-Filme mit einer La-Konzentration unter 4 at.-% eine bevorzugte (100)-Orientierung aufwiesen. Wenn die La-Zugabe unter 3 at.-% betrug, deuten die REM-Ergebnisse darauf hin, dass die PLZT-Dünnschichten über eine dichte und säulenartige Mikrostruktur verfügen, während die anderen eine säulenartige Struktur nur am Fuß des Querschnittes aufwiesen. Die maximale Dielektrikumskonstante (1502.59 bei 100 Hz) ergab sich für den Film mit 2 at.-% La, was eine Zunahme von 53.9 % gegenüber dem La-freien Film bedeutet. Ohne Einführung einer Keimlage konnten die (100)-orientierten PLZT-Dünnschichten mittels konventioneller Wärmebehandlungsverfahren und unter Anpassung der La-Zugabe hergestellt werden.


*Correspondence Address, Prof. Dr.-Ing. Helin Zou, Key Laboratory for Micro/Nano Systems and Technology, Dalian University of Technology, 116024, Dalian, P. R. China., E-mail:

Wencai Xu, born in 1992, is currently a postgraduate student. He has been studying the preparation and characterization of piezoelectric materials at the Key Laboratory for Micro/Nano Systems and Technology, School of Mechanical Engineering, Dalian University of Technology, China with focus on mechatronic engineering since 2014.

Qi Li, born in 1993, is a postgraduate student. He has been studying the preparation and characterization of functional thin films at the Key Laboratory for Micro/Nano Systems and Technology, School of Mechanical Engineering, Dalian University of Technology, China with focus on machinery manufacturing and automation since 2015.

Dr. Zhifu Yin, born in 1985, is a lecturer in the Faculty of the School of Mechanical Science and Engineering at Jilin University in Changchun, China. In 2016, he finished his PhD at Dalian University of Technology, China. He is author and co-author of 25 papers in SCI journals and more than 10 papers in other journals and conference proceedings books.

Xing Wang, born in 1987, is a PhD candidate. He has been studying the design and manufacture of piezoelectric inkjet printhead at the Key Laboratory for Micro/Nano Systems and Technology, School of Mechanical Engineering, Dalian University of Technology, China with focus on micro-electromechanical engineering since 2015.

Dr. Helin Zou, born in 1954, is Professor at Dalian University of Technology, China. He obtained his PhD degree at the University of Wales, Cardiff, UK, in 2001. He is working at the Key Laboratory for Micro/Nano Systems and Technology of Dalian University of Technology since 2007. His current field of research is the application of microfabrication technology for the development of micro-engineered systems aimed at providing an information gathering front end to electronic systems. He has published more than 100 international journal and conference papers based on this research area. He is a member of the British Institute of Physics and Chinese Micro/nano Society.


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Published Online: 2017-10-02
Published in Print: 2017-10-04

© 2017, Carl Hanser Verlag, München

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