Abstract
Atom probe tomography (APT) is the only approach able to map out the 3D distribution of chemical species in a material at the atomic-scale. It has been applied to a number of issues in physical metallurgy including precipitation, segregation of impurities to lattice defects, ordering, magnetic multilayers. The implementation of ultrafast laser pulses instead of high-voltage pulses to field evaporate surface atoms has been a major breakthrough as this opened APT to semi-conductors or oxides that are key materials in microelectronics. This article reviews some of the more recent salient findings in physical metallurgy and microelectronics materials using APT. Special attention is paid to the role played by APT in the elucidation of irradiation-induced segregation effects. The following section deals with the segregation of dopants to crystal defects in silicon, a phenomenon that has a considerable influence on properties and performance of latest generation nano-transistors and devices.
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