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Photoluminescence studies of ZnO thin films prepared using a laser-assisted sol-gel method

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Abstract

ZnO thin films were grown on Si(100) substrates by using a laser-assisted sol-gel method involving irradiation from a 325-nm He-Cd laser. In contrast to conventionally-synthesized sol-gel ZnO thin films, the surfaces of those grown using the laser-assisted sol-gel method were much smoother. The optical properties of the ZnO thin films were investigated using temperature-dependent photoluminescence (PL). In the room-temperature PL spectra, the intensity of the blue-green emission was dramatically decreased by laser irradiation during the stages of deposition and post-heat treatment. Moreover, the full width at half maximum of the near-band-edge emission peaks was decreased by the laser irradiation. The activation energy of the laser-assisted sol-gel ZnO thin films was determined to be ∼99 meV, and the values of the fitting parameters α and β for Varshni’s empirical equation were 4 × 10−3 eV/K and 4.9 × 103 K, respectively. Another fitting based on the thermal broadening effect of the excitonic emission peak revealed a decreased exciton-phonon interaction in the laser-assisted ZnO thin films.

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Authors and Affiliations

  1. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, 621-749, Korea

    Min Su Kim, Jewon Lee, Yangsoo Kim & Jae-Young Leem

  2. School of Chemical Engineering, Yeungnam University, Gyeongsan, 712-749, Korea

    Sang-heon Lee, Wonshoup So & Jae Hak Jung

  3. Department of Physics, Yeungnam University, Gyeongsan, 712-749, Korea

    Jong Su Kim

Authors
  1. Min Su Kim
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  2. Jewon Lee
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  3. Yangsoo Kim
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  4. Jae-Young Leem
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  5. Sang-heon Lee
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Correspondence to Jae-Young Leem.

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Kim, M.S., Lee, J., Kim, Y. et al. Photoluminescence studies of ZnO thin films prepared using a laser-assisted sol-gel method. Journal of the Korean Physical Society 61, 1826–1830 (2012). https://doi.org/10.3938/jkps.61.1826

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  • DOI: https://doi.org/10.3938/jkps.61.1826

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