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Structural and electrical investigations of aurivillius-phase La- and V-doped Bi5FeTi3O15 thin films

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Abstract

Bi5FeTi3O15 (BFTO), Bi4.25La0.75FeTi3O15 (BLFTO), Bi5FeTi2.97V0.03O15+δ (BFTVO) and Bi4.25La0.75FeTi2.97V0.03O15+δ (BLFTVO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The thin films were well crystallized and randomly oriented, with no detectable impurities and no secondary phases. The effects of La and V doping alone and of co-doping with La and V on the structural, electrical and ferroelectric properties of Bi5FeTi3O15 thin films were investigated. Among the thin films, superior electrical properties were observed in the BLFTVO thin film. The BLFTVO thin film exhibited a low leakage current density of 1.7 × 10−6 A/cm2 at an electric field of 100 kV/cm, typical hysteresis loops, a high dielectric constant and a low loss tangent.

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Authors and Affiliations

  1. Department of Physics, Changwon National University, Changwon, 641-773, Korea

    Hae Jin Kim, Jin Won Kim, Ji Ya. Choi, Eun Ju Kim, C. M. Raghavan & Sang Su Kim

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  1. Hae Jin Kim
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  2. Jin Won Kim
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  3. Ji Ya. Choi
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  4. Eun Ju Kim
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  5. C. M. Raghavan
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  6. Sang Su Kim
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Correspondence to Sang Su Kim.

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Kim, H.J., Kim, J.W., Choi, J.Y. et al. Structural and electrical investigations of aurivillius-phase La- and V-doped Bi5FeTi3O15 thin films. Journal of the Korean Physical Society 63, 2330–2334 (2013). https://doi.org/10.3938/jkps.63.2330

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  • DOI: https://doi.org/10.3938/jkps.63.2330

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