Abstract
Silver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electronbeam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out to determine the characteristic of the contacts. The Ag/AZO films annealed at 600 °C were found to present an ohmic contact behavior. The specific contact resistance was calculated to be 9.76 × 10−4 Ωcm2 and the transmittance was over 80% for visibly light. The atomic force microscope was used to measure the aggregation of Ag grains which may have been the main factor in the formation of the Ag/AZO ohmic contact to p-GaN.
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Han, T., Wang, T., Gan, X.W. et al. Low resistance and transparent Ag/AZO ohmic contact to p-GaN. Journal of the Korean Physical Society 65, 62–64 (2014). https://doi.org/10.3938/jkps.65.62
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DOI: https://doi.org/10.3938/jkps.65.62