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Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

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Abstract

Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device’s structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

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Authors and Affiliations

  1. Department of Electronic Engineering, Konkuk University, Seoul, 05029, Korea

    Hyeonseong Jeon, Seongjong Kang & Hwansool Oh

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  1. Hyeonseong Jeon
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  2. Seongjong Kang
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  3. Hwansool Oh
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Correspondence to Hwansool Oh.

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Jeon, H., Kang, S. & Oh, H. Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment. Journal of the Korean Physical Society 68, 206–209 (2016). https://doi.org/10.3938/jkps.68.206

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  • DOI: https://doi.org/10.3938/jkps.68.206

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