A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability

Hrishikesh Das; Swapna Sunkari; Joshua Justice; Danielle Hamann

doi:10.4028/p-sctxav

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062A Deeper Look into the Effects of Extended Defects...

A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability

Abstract:

The detection and classification of SiC Epitaxial extended defects was refined to separate out defective areas that influence device characteristics. Die level defect localization along with defect area calculations were performed on millions of die across product groups. A clear impact of non-killer defects was observed, especially with increasing density and defective area in the die. Specifically, all types of stacking faults caused higher leakage, lower blocking voltage, and increases in ON resistance and threshold leakage. Furthermore, MOSFET devices were affected to a much larger extent than diode devices. Testing die with higher numbers of defects provides insight on device reliability. Analyzing devices with specific counts of BPDs let us quantify the amount of bipolar degradation caused drift by product/voltage classes.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

406-410

DOI:

https://doi.org/10.4028/p-sctxav

Citation:

Cite this paper

Online since:

May 2022

Authors:

Hrishikesh Das*, Swapna Sunkari, Joshua Justice, Danielle Hamann

Keywords:

Classification, Crystal Defects, Electrical Test, Epitaxy, Extended Defects, Reliability, Statistics, Yield

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Creative Commons CC BY 4.0

* - Corresponding Author

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