Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators

Lynn Khine; Lionel Y.L. Wong; Jeffrey B.W. Soon; Ming Lin Julius Tsai

doi:10.4028/www.scientific.net/AMR.254.74

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 254Evaluation of Piezoelectric Properties of AlN...

Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators

Abstract:

This paper presents an effective evaluation of piezoelectric coefficients (d₃₁ and d₃₃) and other mechanical properties of AlN thin films using resonator structures fabricated on a single wafer. The extracted value for d₃₁ is 1.60pm/V and the d₃₃ value is 3.15pm/V, which are comparable to the coefficient values published in literature. Fabrication of these resonator structures is straightforward and can be incorporated with other more complex steps. Hence, these resonators can serve as an excellent test structures to evaluate and predict the quality of AlN growth and piezoelectric properties of thin AlN films.

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Periodical:

Advanced Materials Research (Volume 254)

Pages:

74-77

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.254.74

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Online since:

May 2011

Authors:

Lynn Khine, Lionel Y.L. Wong, Jeffrey B.W. Soon, Ming Lin Julius Tsai

Keywords:

AlN Properties, Mechanical Characterization, MEMS Resonator

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References

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