Ten-Micrometer-Thick Silicon Diaphragm Used in Condenser Microphone

Naoki Kimori; Yuichiro Kumai; Shinsuke Hishinuma; Tsuyoshi Ikehara; Ryutaro Maeda; Yasushiro Nishioka

doi:10.4028/www.scientific.net/KEM.538.277

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 538Ten-Micrometer-Thick Silicon Diaphragm Used in...

Ten-Micrometer-Thick Silicon Diaphragm Used in Condenser Microphone

Abstract:

Small condenser microphones with high performances are strongly demanded. This paper describes a silicon condenser microphone fabricated on silicon on insulator (SOI) substrate using only one photo mask with improved sensitivity performance. The improvements were due to reduction of the floating capacitance, thinning of the silicon diaphragm, and increasing the electrode area at the back plate of the microphone. This microphone consists of a diaphragm with the thickness of 10 μm and the diameter of 2 mm, a SiO2 insulative spacer (4-μm-thick buried oxide), and a 300-μm thick silicon back plate with the meshed structures having small (60 μm) hexagonal shaped acoustic holes. The gap between the 10-μm-thick silicon diaphragm and the back plate was 4 μm. This microphone was confirmed to function in the auditory frequency region with a sensitivity of –85 ~ -70 dB.

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Periodical:

Key Engineering Materials (Volume 538)

Pages:

277-280

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.538.277

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Online since:

January 2013

Authors:

Naoki Kimori, Yuichiro Kumai, Shinsuke Hishinuma, Tsuyoshi Ikehara, Ryutaro Maeda, Yasushiro Nishioka

Keywords:

MEMS, Microphone, Silicon, SOI Wafer

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References

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