The Microwave Dielectric Materials of (Zn1-xMgx)TiNb2O8 for Electroceramics Devices Applications

Cheng Liang Huang; Sen Hung Huang; Ruei Zhung Lee

doi:10.4028/www.scientific.net/KEM.547.49

Paper Titles

Novel Compact Interdigital Bandpass Filters with Multilayer Stepped Impedance Resonators/Folded Quarter–Wavelength Resonators
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Structural, Electrical and Magnetic Properties of Microwave Processed Ni_0.80Zn_0.20Fe₂O₄
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Aluminum-Induced Crystallization of p⁺ Silicon Pinholes for the Formation of Rear Passivation Contact in Solar Cell
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Structural, Dielectric and Electrical Studies of Ba₄CaRTi₃Nb₇O₃₀ (R = Eu, Dy) Ferroelectric System
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The Microwave Dielectric Materials of (Zn_1-xMg_x)TiNb₂O₈ for Electroceramics Devices Applications
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Effect of Temperature of Synthesis on X-Ray, Infrared Spectroscopic Study and Magnetic Properties of Magnesium Zinc Ferrites
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Structural and Magnetic Characterizations of 200 MeV Ag¹⁵⁺ Irradiated Bi_xCo_2-xMnO₄ Thin Films
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Structural Phase Transformation in SiC and PtC under Pressure
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Complex Impedance Spectroscopy of Ba_0.8Pb_0.2TiO₃ Synthesized by Mechano Chemical Activation
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The Microwave Dielectric Materials of (Zn_1-xMg_x)TiNb₂O₈ for Electroceramics Devices Applications

Abstract:

The microwave dielectric properties of ZnTiNb2O8 ( ~34, Qf ~42,500GHz, ~ –52ppm/°C) was reported by Hong et. al. To lower the dielectric loss of ZnTiNb2O8, we studied the systems of (Zn1-xMgx)TiNb2O8 (x=0.02-0.1) ceramics. The manner of equivalent-charge trace substitutions for Zn2+-sites were replaced with Mg2+. In order to achieve more stability, CaTiO3 ( ~ +800ppm/°C) was used to adjust the negative τf of (Zn0.95Mg0.05)TiNb2O8 ( ~ –58ppm/°C). A bandpass filter using coupled microstrip-line resonators have been designd for wireless LAN system such as IEEE 802.11 ( 2.4 or 5 GHz). The response of the implemented filter used 0.8(Zn0.95Mg0.05)TiNb2O8-0.2 CaTiO3 ( ~35.77, Qf ~18,000GHz, ~ +4ppm/°C) dielectric substrates. In this paper, the bandpass filter area designed on 0.8(Zn0.95Mg0.05)TiNb2O8-0.2 CaTiO3 is reduced 88% than FR4 substrates and the near zero τf makes better frequency stability.