[1]
P. O. Å. Persson, L. Hultman, H. Jacobson, J. P. Bergman, E. Janzén, J. M. Molina-Aldareguia, W. J. Clegg, and T. Tuomi, Structural defects in electrically degraded 4H-SiC p+/n-/n+ diodes, Appl. Phys. Lett. 80 (2002) 4852.
DOI: 10.1063/1.1487904
Google Scholar
[2]
M. Zhang, P. Pirouz, and H. Lendenmann, Transmission electron microscopy investigation of dislocations in forward-biased 4H-SiC p-i-n diodes, Appl. Phys. Lett. 83 (2003) 3320.
DOI: 10.1063/1.1620684
Google Scholar
[3]
W. M. Vetter, J. Q. Liu, M. Dudley, M. Skowronski, H. Lendenmann, and C. Hallin, Dislocation loops formed during the degradation of forward-biased 4H-SiC p-n junctions, Mater. Sci. Eng. B 98 (2003) 220.
DOI: 10.1016/s0921-5107(03)00040-0
Google Scholar
[4]
H. Jacobson, J. P. Bergman, C. Hallin, E. Janzén, T. Tuomi, and H. Lendenmann, Properties and origins of different stacking faults that cause degradation in SiC PiN diodes, J. Appl. Phys. 95 (2004) 1485.
DOI: 10.1063/1.1635996
Google Scholar
[5]
M. Skowronski and S. Ha, Degradation of hexagonal silicon-carbide-based bipolar devices, J. Appl. Phys. 99 (2006) 011101.
DOI: 10.1063/1.2159578
Google Scholar
[6]
K. Konishi, S. Yamamoto, S. Nakata, Y. Nakamura, Y. Nakanishi, T. Tanaka, Y. Mitani, N. Tomita, Y. Toyoda, and S. Yamakawa, Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress, J. Appl. Phys. 114 (2013) 014504.
DOI: 10.1063/1.4812590
Google Scholar
[7]
A. Tanaka, H. Matsuhata, N. Kawabata, D. Mori, K. Inoue, M. Ryo, T. Fujimoto, T. Tawara, M. Miyazato, M. Miyajima, K. Fukuda, A. Ohtsuki, T. Kato, H. Tsuchida, Y. Yonezawa, and T. Kimoto, Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes, J. Appl. Phys. 119 (2016) 095711.
DOI: 10.1063/1.4943165
Google Scholar
[8]
A. Agarwal, H. Fatima, S. Haney, and S. –H. Ryu, A new degradation mechanism in high-voltage SiC power MOSFETs, IEEE Electron Device Lett. 28 (2007) 587.
DOI: 10.1109/led.2007.897861
Google Scholar
[9]
J. D. Caldwell, R. E. Stahlbush, E. A. Imhoff, K. D. Hobart, M. J. Tadjer, Q. Zhang, and A. Agarwal, Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes, J. Appl. Phys. 106 (2009) 044504.
DOI: 10.1063/1.3194323
Google Scholar
[10]
P. Pirouz, J. L. Demenet, and M. H. Hong, On transition temperatures in the plasticity and fracture of semiconductors, Philos. Mag. A 81 (2001) 1207.
DOI: 10.1080/01418610108214437
Google Scholar
[11]
J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, Structure of recombination-induced stacking faults in high-voltage SiC p-n junctions, Appl. Phys. Lett. 80 (2002) 749.
DOI: 10.1063/1.1446212
Google Scholar
[12]
H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J. P. Bergman, A. Ellison, T. Tuomi, and E. Janzén, Dislocation evolution in 4H-SiC epitaxial layers, J. Appl. Phys. 91 (2002) 6354.
DOI: 10.1063/1.1468891
Google Scholar
[13]
S. Ha, P. Mieszkowski, M. Skowronski, and L. B. Rowland, Dislocation conversion in 4H silicon carbide epitaxy, J. Cryst. Growth 244 (2002) 257.
DOI: 10.1016/s0022-0248(02)01706-2
Google Scholar
[14]
T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, and K. Arai, Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography, J. Cryst. Growth 260 (2004) 209.
DOI: 10.1016/j.jcrysgro.2003.08.065
Google Scholar
[15]
W. Chen and M. A. Capano, Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles, J. Appl. Phys. 98 (2005) 114907.
DOI: 10.1063/1.2137442
Google Scholar
[16]
Z. Zhang and T. S. Sudarshan, Basal plane dislocation-free epitaxy of silicon carbide, Appl. Phys. Lett. 87 (2005) 151913.
DOI: 10.1063/1.2093931
Google Scholar
[17]
H. Tsuchida, M. Ito, I. Kamata, and M. Nagano, Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique, Phys. Status Solidi B 246 (2009) 1553.
DOI: 10.1002/pssb.200945056
Google Scholar
[18]
N. A. Mahadik, R. E. Stahlbush, M. G. Ancona, E. A. Imhoff, K. D. Hobart, R. L. Myers-Ward, C. R. Eddy, Jr., D. K. Gaskill, and F. J. Kub, Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers, Appl. Phys. Lett. 100 (2012) 042102.
DOI: 10.1063/1.3679609
Google Scholar
[19]
S. Hayashi, T. Naijo, T. Yamashita, M. Miyazato, M. Ryo, H. Fujisawa, M. Miyajima, J. Senzaki, T. Kato, Y. Yonezawa, K. Kojima, and H. Okumura, Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes, Appl. Phys. Express 10 (2017) 081201.
DOI: 10.7567/apex.10.081201
Google Scholar
[20]
A. Iijima, I. Kamata, H. Tsuchida, J. Suda, and T. Kimoto, Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers, Philos. Mag. 97 (2017) 2736.
DOI: 10.1080/14786435.2017.1350788
Google Scholar
[21]
S. Hayashi, T. Yamashita, J. Senzaki, M. Miyazato, M. Ryo, M. Miyajima, T. Kato, Y. Yonezawa, K. Kojima, and H. Okumura, Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes, Jpn. J. Appl. Phys. 57 (2018) 04FR07.
DOI: 10.7567/jjap.57.04fr07
Google Scholar
[22]
A. Okada, J. Nishio, R. Iijima, C. Ota, A. Goryu, M. Miyazato, M. Ryo, T. Shinohe, M. Miyajima, T. Kato, Y. Yonezawa, and H. Okumura, Dependence of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes, Jpn. J. Appl. Phys. 57 (2018) 061301.
DOI: 10.7567/jjap.57.061301
Google Scholar
[23]
T. Tawara, S. Matsunaga, T. Fujimoto, M. Ryo, M. Miyazato, T. Miyazawa, K. Takenaka, M. Miyajima, A. Otsuki, Y. Yonezawa, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes, J. Appl. Phys. 123 (2018) 025707.
DOI: 10.1063/1.5009365
Google Scholar
[24]
R. E. Stahlbush, K. X. Liu, Q. Zhang, and J. J. Sumakeris, Whole-wafer mapping of dislocations in 4H-SiC epitaxy, Mater. Sci. Forum 556-557 (2007) 295.
DOI: 10.4028/www.scientific.net/msf.556-557.295
Google Scholar
[25]
T. Fujimoto, T. Aigo, M. Nakabayashi, S. Sato, M. Katsuno, H. Tsuge, H. Yashiro, H. Hirano, T. Hoshino, and W. Ohashi, Time sequential evolutions of optically-induced single Shockley stacking faults formed in 4H-SiC epitaxial layers, Mater. Sci. Forum 645-648 (2010) 319.
DOI: 10.4028/www.scientific.net/msf.645-648.319
Google Scholar
[26]
R. Hirano, H. Tsuchida, M. Tajima, K. M. Itoh, and K. Maeda, Polarization of photoluminescence from partial dislocations in 4H-SiC, Appl. Phys. Express 6 (2013) 011301.
DOI: 10.7567/apex.6.011301
Google Scholar
[27]
A. O. Konstantinov, and H. Bleichner, Bright-line defect formation in silicon carbide injection diodes, Appl. Phys. Lett. 71 (1997) 3700.
DOI: 10.1063/1.120486
Google Scholar
[28]
A. Galeckas, J. Linnros, and P. Pirouz, Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias, Appl. Phys. Lett. 81 (2002) 883.
DOI: 10.1063/1.1496498
Google Scholar
[29]
K. X. Liu, R. E. Stahlbush, S. I. Maximenko, and J. D. Caldwell, Differences in emission spectra of Si- and C-core partial dislocations, Appl. Phys. Lett. 90 (2007) 153503.
DOI: 10.1063/1.2721139
Google Scholar
[30]
K. X. Liu, X. Zhang, R. E. Stahlbush, M. Skowronski, and J. D. Caldwell, Difference in emission spectra of dislocations in 4H-SiC epitaxial layers, Mater. Sci. Forum 600-603 (2009) 345.
DOI: 10.4028/www.scientific.net/msf.600-603.345
Google Scholar
[31]
I. Kamata, X. Zhang, and H. Tsuchida, Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers, Appl. Phys. Lett. 97 (2010) 172107.
DOI: 10.1063/1.3499431
Google Scholar
[32]
C. Kawahara, J. Suda, and T. Kimoto, Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging, Jpn. J., Appl. Phys. 53 (2014) 020304.
DOI: 10.7567/jjap.53.020304
Google Scholar
[33]
M. Skowronski, J. Q. Liu, W. M. Vetter, M. Dudley, C. Hallin, and H. Lendenmann, Recombination-enhanced defect motion in forward-biased 4H-SiC p-n diodes, J. Appl. Phys. 92 (2002) 4699.
DOI: 10.1063/1.1505994
Google Scholar
[34]
S. Ha, M. Benamara, M. Skowronski, and H. Lendenmann, Core structure and properties of partial dislocations in silicon carbide p-i-n diodes, Appl. Phys. Lett. 83 (2003) 4957.
DOI: 10.1063/1.1633969
Google Scholar
[35]
Y. Tokuda, T. Yamashita, I. Kamata, T. Naijo, T. Miyazawa, S. Hayashi, N. Hoshino, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing, J. Appl. Phys. 122 (2017) 045707.
DOI: 10.1063/1.4996098
Google Scholar
[36]
P. M. Anderson, J. P. Hirth, and J. Lothe, Theory of Dislocations, third ed., Cambridge University Press, Oxford, (2017).
Google Scholar
[37]
J. Nishio, A. Okada, C. Ota, and M. Kushibe, presented in DRIP XVIII, Berlin (2019) P-18.
Google Scholar
[38]
J. Yang, S. Izumi, R. Muranaka, Y. Sun, S. Hara, and S. Sakai, Reaction pathway analysis for differences in motion between C-core and Si-core partial dislocation in 3C-SiC, Mech. Eng. J. 2 (2015) 15-00183.
DOI: 10.1299/mej.15-00183
Google Scholar