Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing
p.776
p.776
Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching
p.780
p.780
Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining
p.784
p.784
Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD
p.791
p.791
Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
p.795
p.795
Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode
p.800
p.800
Evaluation of Buried Grid JBS Diodes
p.804
p.804
High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step
p.808
p.808
The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)
p.812
p.812
Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
Abstract:
The static performance of different active and termination area designs for SiC-based Schottky diodes, suitable for 3.3kV applications, were investigated by means of extensive numerical simulations. We found quantitatively that the high electric field of SiC close to avalanche-breakdown is shielded most effectively from the Schottky interface by a trench-based design. Moreover, we conclude that the edge termination design with junction termination extension and four implanted p+ guard rings is most robust against oxide interfacial charge.
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Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
795-799
Citation:
Online since:
February 2014
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