Synthesis and Characterization of Al4SiC4: A “New” Wide Band Gap Semiconductor Material

Dimitrios Zevgitis; Odette Chaix-Pluchery; Beatrice Doisneau; Mircea Modreanu; Joseph La Manna; Eirini Sarigiannidou; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.821-823.974

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Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)
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Si NWs Conversion to Si-SiC Core-Shell NWs by MBE
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The Role of Aluminium in the Synthesis of Mesoporous 4H Silicon Carbide
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Synthesis and Characterization of Al₄SiC₄: A “New” Wide Band Gap Semiconductor Material
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Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect
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Influence of Diamond CVD Growth Conditions and Interlayer Material on Diamond/GaN Interface
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Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures
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Chemical Vapor Deposition of Boron Nitride Thin Films on SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Synthesis and Characterization of Al4SiC4: A “New”...

Synthesis and Characterization of Al₄SiC₄: A “New” Wide Band Gap Semiconductor Material

Abstract:

High temperature solution growth of Al₄SiC₄single crystals was carried out from the melt of silicon and aluminium pieces in a graphite crucible used as carbon source (typically 1800°C under 1 bar of argon). The obtained crystals, in the mm scale, were then characterized by a variety of techniques including: Raman spectroscopy, transmission electron microscopy techniques, X-ray diffraction and UV-Vis-NIR spectroscopy. A good structural quality was revealed by TEM, ensuring a well resolved Raman spectrum. The UV-Vis transmission spectrum shows an optical gap located around 2-2.5 eV.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

974-977

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.974

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Online since:

June 2015

Authors:

Dimitrios Zevgitis, Odette Chaix-Pluchery, Beatrice Doisneau, Mircea Modreanu, Joseph La Manna, Eirini Sarigiannidou*, Didier Chaussende

Keywords:

Al₄SiC₄, High Temperature Solution Growth, Raman Spectroscopy, Single Crystal Synthesis, UV-Vis Transmission Spectroscopy

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