Tailoring the Electrical Properties of Undoped GaP

Pawel Kaminski; Roman Kozlowski; Stanislawa Strzelecka; Andrzej Hruban; Elzbieta Jurkiewicz-Wegner; Miroslaw Piersa; Michal Pawlowski; Marek Suproniuk

doi:10.4028/www.scientific.net/SSP.178-179.410

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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Tailoring the Electrical Properties of Undoped GaP

Tailoring the Electrical Properties of Undoped GaP

Abstract:

The charge compensation in undoped GaP single crystals is investigated by modeling the Fermi level position for various concentrations of shallow and deep donors and acceptors. The model is based on the numerical solution of the charge neutrality equation and allows for calculating the Fermi energy in the temperature range of 1 –1000 K. The experimental studies of the electronic properties and concentrations of grown-in defect centers are performed by the high-resolution photoinduced transient spectroscopy (HRPITS). We show that at the shallow acceptor concentration below 1x10¹⁵ cm^-3 and the concentration of deep-level defects ~3x10¹⁵ cm^-3 obtaining undoped GaP with the semi-insulating (SI) properties is possible by substantial reducing the residual concentration of shallow donor impurities.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

410-415

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.410

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Online since:

August 2011

Authors:

Pawel Kaminski, Roman Kozlowski, Stanislawa Strzelecka, Andrzej Hruban, Elzbieta Jurkiewicz-Wegner, Miroslaw Piersa, Michal Pawlowski, Marek Suproniuk

Keywords:

Defect Levels, HRPITS, SI Gallium Phosphide

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