Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

Han Guo; Wu Tang; Wei Zhou; Chi Ming Li

doi:10.4028/www.scientific.net/AMM.217-219.2393

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 217-219Effect of GaN Cap Layer on the Electrical...

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

Abstract:

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance g_m from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×10¹⁸cm^-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance g_m, saturation current I_ds, current-gain cutoff frequency f_T, maximum oscillation frequency f_max and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large I_ds of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the g_m and I_ds.

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Periodical:

Applied Mechanics and Materials (Volumes 217-219)

Pages:

2393-2396

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.217-219.2393

Citation:

Cite this paper

Online since:

November 2012

Authors:

Han Guo, Wu Tang, Wei Zhou, Chi Ming Li

Keywords:

AlGaN/GaN, Electrical Properties, Gan Cap, HEMT

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