Electrical Properties of Bi(In,Ga,Sc)O3-PbTiO3 Piezoelectric Ceramics

Yi Chen; Jian Guo Zhu; Ding Quan Xiao

doi:10.4028/www.scientific.net/AMM.364.794

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 364Electrical Properties of Bi(In,Ga,Sc)O3-PbTiO3...

Electrical Properties of Bi(In,Ga,Sc)O₃-PbTiO₃Piezoelectric Ceramics

Abstract:

The gallium and indium double-modified bismuth scandate-lead titanate (1-x)Bi (In_0.20Ga_0.05Sc_0.75)O₃-xPbTiO₃ ((1-x)BIGS-xPT, x=0.55-0.70) ceramics were prepared by using conventional ceramic technique. (1-x)BIGS-xPT ceramics for near x=0.60 exhibits an evident enhancement in room temperature dielectric and piezoelectric properties, with dielectric constant ε, piezoelectric constant d₃₃, planar electromechanical coupling coefficient k_p and Curie temperature T_C of 1100, 295 pC/N, 0.43 and 435 °C, respectively. The T_C of (1-x)BIGS-xPT is in the range of 425-530 °C for the compositions investigated. The combination of high T_C and excellent piezoelectric activity suggest that the (1-x)BIGS-xPT ceramics are usable candidate materials for high temperature piezoelectric devices applications.

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Periodical:

Applied Mechanics and Materials (Volume 364)

Pages:

794-798

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.364.794

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Online since:

August 2013

Authors:

Yi Chen, Jian Guo Zhu, Ding Quan Xiao

Keywords:

Curie Temperature, Perovskite, Piezoelectric Ceramic (PZT), Piezoelectric Properties

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