Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film

Chun Yang Huang; Umesh Chand; Tseung Yuen Tseng

doi:10.4028/www.scientific.net/AMM.543-547.3839

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 543-547Improvement of Unipolar Resistive Switching...

Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO₂ Thin Film

Abstract:

Due to the electrical and physical analyses, the robust negative voltage unipolar resistive switching behaviors in Ti/ZrO₂/Ti/ZrO₂/Pt device have been investigated. The Ti diffusion in ZrO₂ film can generate more amounts of oxygen vacancies in it, which leads the lower value and narrower variation in forming voltage. Moreover, the good performances with more than 1000 switching cycles and long retention test can be achieved in the present device.

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Periodical:

Applied Mechanics and Materials (Volumes 543-547)

Pages:

3839-3842

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.543-547.3839

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Online since:

March 2014

Authors:

Chun Yang Huang, Umesh Chand, Tseung Yuen Tseng*

Keywords:

Embedded, Resistive Switching, RRAM, Ti, Unipolar, Zro₂

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* - Corresponding Author

References

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