Electrical Properties of Tin-Doped Zinc Oxide Nanostructures Doped at Different Dopant Concentrations

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This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 103 Ωcm-1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

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577-581

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June 2015

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[1] N. Itoh, in functional Thin Films and Functional Materials: New Concept and Technologies, ed. D.L. Shi, Tsinghua University Press and Springer-verlag, bErlin, 2003, p.1.

Google Scholar

[2] Zhiyong Fan & Jia G. Lu. Zinc Oxide Nanostructures : Synthesis and Properties, Department of Chemical Engineering and Material Science & Department of Electrical Engineering and Computer Science, University of California, Irvine, CA 92697, USA, (2005).

DOI: 10.31526/lhep.2.2019.113

Google Scholar

[3] S. Araki, Z. Min, T. Doe, L. Li, M. Horita, T. Nishida, et al., Fabrication of nano-patterns using quick gel-nanoimprint process, in Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for, 2012, pp.1-2.

DOI: 10.1109/imfedk.2012.6218583

Google Scholar

[4] A. Janotti & C. G. Van de Walle, Fundamentals of Zinc Oxide as A Semiconductor, Materials Department, University of California, Santa Barbara, CA 93106-5050, USA, 22 Oct (2009).

Google Scholar

[5] Zhiyong Fan & Jia G. Lu. Zinc Oxide Nanostructures : Synthesis and Properties, Department of Chemical Engineering and Material Science & Department of Electrical Engineering and Computer Science, University of California, Irvine, CA 92697, USA. 7 Jan (2005).

DOI: 10.31526/lhep.2.2019.113

Google Scholar

[6] Y Yi-Joe Pon; Chih-Hsiung Shen; Shu-Jung Chen, A low cost high sensitivity CMOS MEMS gas sensor, , Instrumentation and Measurement Technology Conference I2MTC), 2010 IEEE, vol., no., 3-6 May 2010, p.564, 567.

DOI: 10.1109/imtc.2010.5488078

Google Scholar

[7] Nargis Bano, Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs), Linkoping Studies in Science and Technology, (2011).

Google Scholar

[8] Comini, E., Metal oxide nanowires gas sensors, Electronics, Circuits and Systems, 008. ICECS 2008. 15th IEEE International Conference on, vol., no., Aug. 31 2008-Sept. 3 2008, p.13, 15.

DOI: 10.1109/icecs.2008.4675126

Google Scholar

[9] Funakubo, Hiroshi, N. Mizutani, M. Yonetsu, A. Saiki, and K. Shinozaki, Orientation of Control of ZnO Thin Films Prepared by CVD, Journal of Electroceramics 4, no. 1, 1999, pp.25-32.

DOI: 10.1023/a:1009965432447

Google Scholar

[10] S. Mridha and D. Basak, Effect of Thickness on the Structural, Electrical, and Optical Properties of ZnO films, Material research bulletin 42, no. 5, 2007, pp.875-882.

DOI: 10.1016/j.materresbull.2006.08.019

Google Scholar

[11] Chen, J. J., F. Zeng, D. M. Li, J. B. Niu, and F. Pan, Depostion of High-Quality Zinc Oxide Thin Films on Diamond Substrates for High-Frequency Surface Acoustic Wave Filter Applications, Thin Films 485, no. 1, 2005, pp.257-261.

DOI: 10.1016/j.tsf.2005.04.028

Google Scholar

[12] Ozgur, U.; Hofstetter, Daniel; Morkoc, Hadis, ZnO Devices and Applications: A Review of Current Status and Future Prospects, Proceedings of the IEEE, vol. 98, no. 7, 1268, July 2010, p.1255.

DOI: 10.1109/jproc.2010.2044550

Google Scholar

[13] Bandyopadhyay, S., G. k. Paul, R. Roy, S. k. Sen, and S. Sen. Study of Structural and Electrical Properties of Grain-boundary Modified ZnO Films Prepared by Sol–gel Technique., Materials Chemistry and Physics 74. 1, 2002, pp.83-91.

DOI: 10.1016/s0254-0584(01)00402-3

Google Scholar

[14] Harish Bahadur, A K Srivasta, Divi Haranath, Harish Chander, A Basu, S B Samanta, K N Sood, Ram Kishore, R K Sharma, Rashmi, Vivekanand Bhatt, Prem Pal & Sudhir Chandra. Nano-structured ZnO films by sol-gel process,. National Physical Laboratory. Dr K S Krishnan Road. New Delhi 110012, 4 January (2007).

DOI: 10.1049/cp:20040825

Google Scholar

[15] F Chen, Cheng-Ying, et al. Surface effects on optical and electrical properties of ZnO nanostructures., Pure and Applied Chemistry 82. 11 (2010): 2055-(2073).

Google Scholar

[16] M.H. Mamat, M.Z. Sahdan, Z. Khusaimi, A.Z. Ahmed, S. Abdullah, M. Rusop, Influence of doping concentrations on the aluminum doped zinc oxide thin films properties for ultraviolet photoconductive sensor applications, Optical Materials 32 (2010).

DOI: 10.1016/j.optmat.2009.12.005

Google Scholar