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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1118The Surface and Photoluminescence Properties of...

The Surface and Photoluminescence Properties of GaAs Passivated by Wet Chemical Method

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Abstract:

The optical and chemical properties of gallium arsenide (GaAs) surfaces treated by ammonium sulfide ((NH₄)₂S) treatments were studied via low-temperature photoluminescence (PL). From the PL mapping and Atomic Force Microscope (AFM) results, the treatment process by (NH₄)₂S is quite effective to remove the oxide layer of GaAs.The PL intensity of (NH₄)₂S-passivated sample was higher than the untreated sample, and the homogeneity of passivated surface was much better. This strategy provides superior promising passivation method for III-V compound semiconductor material in high-speed and optoelectronic device applications.

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Periodical:

Advanced Materials Research (Volume 1118)

Pages:

154-159

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1118.154

Citation:

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Online since:

July 2015

Authors:

Fang Chen, Ji Long Tang*, Guo Jun Liu, Dan Fang, Xian Gao, Zhi Kun Xu, Xuan Fang, Xiao Hui Ma, Li Xu, Xiao Hua Wang, Zhi Peng Wei

Keywords:

GaAs, Passivation, Photoluminescence (PL)

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* - Corresponding Author

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