Effect of Mn Doping on Optical Properties of Nanostructured ZnO Thin Film

Article Preview

Abstract:

Undoped and ZnO: Mn thin films with different Mn content ( 5, 10 and 15 mol%) were grown on glass substrates by spray pyrolysis technique. X-ray diffraction analysis showed that single phase wurtzite structure is formed in all samples. XRD results also indicated that the undoped ZnO were crystallized in c-axis oriented wurtzite structure, while the ZnO: Mn thin films were polycrystalline. The SEM results revealed that Mn presence were modified the surface morphology of the samples. The optical transmittance measurements were performed in the wavelength range from 190 to 1100 nm. The refractive index, extinction coefficient and film thickness were determined by using pointwise unconstrained minimization model. It was observed that the refractive index increased with the increase in Mn concentration. Also, the thin films exhibited the direct band gap increased from 3.20 to 3.28 eV with the increase in Mn content. The optical dispersion parameters have been calculated and analyzed by using Wemple-Di Domenico relation. The obtained values showed that dispersion energy Ed of doped samples was found to be decreasing comparing to undoped thin film.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

201-205

Citation:

Online since:

February 2012

Export:

Price:

[1] K.H. Park, Y.Y. Song, E.K. Lee, L.S. Son, S.K. Oh, S.C. Yu and H.K. Kang: Korean Chem. Soc. Vol. 55 (2009), p.2685.

Google Scholar

[2] C. -Y. Tsay, K. -S. Fan, S. -H. Chen and C. -H. Tsai: J. Alloys. Compd. Vol. 495 (2010), p.126.

Google Scholar

[3] S.J. Lim, S. Kwon and H. Kim: Thin Solid Films, Vol. 516 (2008), p.1523.

Google Scholar

[4] D. Kim, I. Yun and H. Kim: Curr. Appl. Phys. Vol. 10 (2010), p.459.

Google Scholar

[5] P. Singh, A. Kaushal and D. Kaur: J. Alloys. Compd. Vol. 471 (2009), p.11.

Google Scholar

[6] I. Chambouleyron, S.D. Ventura, E.G. Birgin and J.M. Martinez: J. Appl. Phys. Vol. 92 (2002), p.3093.

Google Scholar

[7] T.S. Moss, in: Optical Properties of Semiconductor, Butter Worths Scientific Publication Ltd., London (1959).

Google Scholar

[8] T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma and M. Kawasaki: Appl. Phys. Lett. Vol. 75 (1999), p.3366.

Google Scholar

[9] S.H. Wemple and M. Di Domenico: Phys. Rev. B. Vol. 3 (1971), p.1338.

Google Scholar

[10] S.H. Wemple: Phys. Rev. B. Vol. 7 (1973), p.3767.

Google Scholar