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Properties of High-Quality LaAlO3 Film Deposited by In Situ Plasma-Enhanced-Atomic-Layer-Deposition

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Abstract:

Plasma enhanced atomic layer deposition (PEALD) method can decrease film growing temperature, and allow in-situ plasma treatment. LaAlO3 films were deposited with PEALD at 180°C. High resolution transmission electron microscopy (HRTEM) results exhibited amorphous microstructure of both films even after rapid thermal annealing (RTA) at 800°C. X-ray photoelectron spectroscopy (XPS) spectra suggested that the valence-band offset between the LaAlO3 film and the substrate was 3.3 eV. The electrical experimental results indicated that the leakage current densities were 0.10mA/cm2 and 0.03mA/cm2 respectively at a gate bias of |Vg-Vfb|=1V and the equivalent oxide thicknesses (EOT) of them were 1.2 nm and 1.4 nm, respectively. The densities of interfacial states were calculated to be 1.70×1012eV-1cm-2 and 1.09×1012eV-1cm-2, respectively.

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Info:

Periodical:

Advanced Materials Research (Volume 721)

Pages:

24-28

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.721.24

Citation:

Cite this paper

Online since:

July 2013

Authors:

Duo Cao, Xin Hong Cheng, Ting Ting Jia, Da Wei Xu, Li Zheng, Zhong Jian Wang, Chao Xia, Yue Hui Yu

Keywords:

Interfacial States Densities, LaAlO3, Leakage Current Density, Microstructure, PEALD

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